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UTC 2SA1943
PNP EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER APPLICATIONS
FEATURES
* Complementary to UTC 2SC5200 * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage.
TO-3PL
1:BASE 2:COLLECTOR 3:EMITTER *Pb-free plating product number:2SA1943L
ABSOLUTE MAXIMUM RATINGS
(TC = 25) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC TJ TSTG RATINGS -230 -230 -5 -15 -1.5 150 0 ~ +125 -65 ~ +125 UNIT V V V A A W
ELECTRICAL CHARACTERISTICS
(Ta=25) SYMBOL TEST CONDITIONS ICBO VCB = -230V, IE=0 IEBO VEB= -5V, IC=0 V(BR) CEO IC= -50mA, IB=0 hFE (1) (Note) VCE= -5V, IC= -1A DC Current Gain VCE= -5V, IC= -7A hFE (2) Collector-Emitter Saturation Voltage VCE (sat) IC= -8A, IB= -0.8A Base -Emitter Voltage VBE VCE= -5V, IC= -7A Transition Frequency fT VCE= -5V, IC= -1A Collector Output Capacitance Cob VCB= -10V, IE=0, f=1MHz Note: hFE (1) Classification, R : 55 ~ 110, O : 80 ~ 160 PARAMETER Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage MIN TYP MAX -5.0 -5.0 160 60 -1.5 -1.0 30 360 -3.0 -1.5 V V MHz pF UNIT A A V
-230 55 35
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R214-006,A
www.unisonic.com.tw
UTC 2SA1943
TYPICAL CHARACTERISTICS
IC - VCE
-20
PNP EPITAXIAL SILICON TRANSISTOR
IC - VBE
-20
COLLECTOR CURRENT, IC (A)
-16
-12
-800 -600 -400 -250
COLLECTOR CURRENT, IC (A)
COMMON EMITTER TC =25
COMMON EMITTER VCE = -5V
-16
-200 -100
-12
-150
-8
-8
IB = -10mA
-4
-50 -40 -30 -20
-8 -10
-4
TC =100
25 -25
-0.8 -1.2 -1.6 -2.0
0
0
-2
-4
-6
0
0
-0.4
COLLECTOR-EMITTER VOLTAGE, V CE (V)
BASE-EMITTER VOLTAGE, VBE (V)
VCE(sat) - IC COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat) (V)
-3
hFE - IC
DC CURRENT GAIN, hFE
-1 300 100
TC =100
-0.3
TC =100
-0.1
-25 25 COMMON EMITTER IC / IB = 10
30 10 0 -0.01
25 -25 COMMON EMITTER VCE = -5V
-0.1 -1 -10 -100
-0.01
-0.1
-1
-10
-100
COLLECTOR CURRENT, IC (A)
COLLECTOR CURRENT, IC (A)
SAFE OPERATING AREA
-50 -30
IC MAX. (PULSED) IC MAX. (CONTINUOUS)
1ms 10ms 100ms
-10
COLLECTOR CURRENT, IC (A)
-5 -3
DC OPERATION TC =100
-1 -0.5 -0.3
SINGLE NONREPETITIVE PULSE TC = 25 -0.1 CURVES MUST BE DERATED LINEARLY -0.05 WITH INCREASE IN TEMPERATURE.
-0.03 -3 -10 -30 -100
VCEO MAX.
-300 -1000
COLLECTOR-EMITTER VOLTAGE, VCE (V)
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R214-006,A
www.unisonic.com.tw
UTC 2SA1943
TRANSIENT THERMAL RESISTANCE , rth (/W)
10
PNP EPITAXIAL SILICON TRANSISTOR
rth - tw
CURVES SHOULD BE APPLIED IN THERMAL LIMITED AREA. (SINGLE NONREPETITIVE PULSE) INFINTE HEAT SINK
1
0.1
0.01 0.001
0.01
0.1
1 PULSE WIDTH, t w (s)
10
100
1000
U T C assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all U T C products described or contained herein. U T C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably ex pected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO. LTD
3
QW-R214-006,A
www.unisonic.com.tw

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